Hilton of Santa Fe
Santa Fe, NM
May 17-20, 2004

Sponsored by:
International Microelectronics and Packaging Society (IMAPS)
The Air Force Research Laboratory, WPAFB
Sandia National Laboratories

General Chair: R. Wayne Johnson, Auburn University
General Co-Chair: Randy Normann, Sandia National Laboratories

Technical Chair: Patrick McCluskey, University of Maryland
Technical Co-Chair: Susan L. Heidger, Air Force Research Laboratory

Message from the Chair | Exhibitor Information

Monday, May 17

Registration: Noon – 5 pm

Professional Development Course (1/2 Day)
Overview of Current High-Temperature Electronics Technology including SiC, Passive Components, and Packaging
1 pm – 5 pm

Instructor: Jeffrey Casady, SemiSouth Laboratories, Inc.

Tuesday, May 18

Registration: 7 am – 7:30 pm

Continental Breakfast: 7 am – 8 am

Exhibit Hours: 10 am – 7:30 pm

8 am – 8:40 am
Long-Term High Temperature Electronics Wellbore Demonstration
Joseph Henfling, Randy Normann, Sandia National Laboratories

Session TA1: Packaging I
Session Chair: Clarence Severt, University of Dayton Research Institute
8:40 am – 10:20 am

Packaging Design & Manufacture High Temperature Electronics Module for 225ºC Applications Utilizing Hybrid Microelectronics Technology
Jacob M. Li, Vectron International

Reliability Issues for Ceramic Hybrids in High Temperature Environments
Frøydis Oldervoll, Frode Strisland, SINTEF Electronics and Cybernetics

225°C Life Testing of Hybrid Electronic Packaged Circuits for Downhole
Milton Watts, Quartzdyne, Inc.

Long Life - Harsh Environment Electronic Product Development Programs for Low & High Power Aero Engine & Flight Surface Applications
Peter Shrimpling, Goodrich Engine Control Systems

Break in Exhibit Hall: 10:20 am – 10:35 am

Session TA2: Packaging II
Session Chair: R. Wayne Johnson, Auburn Univeristy
10:35 am – 12:15 pm

Conductive Traces Bonded Directly to Silicon Carbide for High Temperature PWBs
Karen A. Moore, Raymond A. Zatorski, Idaho National Engineering and Environmental Lab

PIBO Film Dielectric for Advanced Microelectronics Packaging
David A. Dalman, Oxazogen, Inc.; M. Frederick Hoover, Hoover Technologies, Inc.

Molten Solder Interconnects: Long Term Reaction Studies and Applications
S. H. Mannan, M. P. Clode, King's College London

Low-Temperature Sintering of Silver Paste as a Viable Die-Attach Solution for High-Temperature Packaging
Guo-Quan Lu, Zach Zhang, Virginia Tech

Lunch in Exhibit Hall: 12:15 pm – 1:30 pm

1:30 pm – 2:10 pm
High Temperature Electronics Research in Europe - Effect of Clustering
Colin Johnston, Oxford University

Session TP1: Packaging III
Session Chair: Elizabeth Kolawa, NASA Jet Propulsion Laboratory
2:10 pm – 3:50 pm

A Study on the Failure Mechanism of a Ti/Mo/Au Metallization System Deposited on AlN Substrates During Solder Testing
Siamak Akhlaghi, Micralyne Inc.; Douglas G. Ivey, University of Alberta

A Crack Propagation Criterion for IC Packaging Materials under High Temperature
Zhongmin Xiao, Biao Wang, Nanyang Technological University

High Temperature Potential of Flip Chip Assemblies
Tanja Braun, K.-F. Becker, M. Koch, V. Bader, R. Aschenbrenner, H. Reichl, Fraunhofer IZM

Structure Optimization of Au Wire Wedge-bond for High Temperature Applications
Liang-Yu Chen, Ohio Aerospace Institute/NASA Glenn Research Center; Shun-Tien (Ted) Lin, Hamilton-Sunstrand Corp.; Xiaodong Luo, United Technologies Research

Break in Exhibit Hall: 3:50 pm – 4:20 pm

Session TP2: Materials I
Session Chair: Jeffrey Casady, Mississippi State University / SemiSouth Laboratories
4:20 pm – 6 pm

Developing and Implementing High Thermal Conductivity Materials with Selective Z-Direction Orientation in CTE-Compatible Package Component Materials
David L. Saums, DS&A; James Connell, Advanced Thermal Technologies LLC; Robert A. Hay, Mark Occhionero, Ceramics Process Systems Corporation; Tony Bonnington, Aztex Inc.

High Temperature Polymers for Geothermal and Electronic Packaging Applications
Teddy M. Keller, Naval Research Laboratory

Comparison of Optically-Detected Defects in Several High-Temperature Substrate Materials Based on Silicon Carbide
Millard Mier, J. Boeckl, Air Force Research Laboratory

Low Temperature Photoluminescence Analysis of Porous 3C-SiC/Si Heterostructure
KheirEddine Ghaffour, V. Lysenko, J. M. Bluet, D. Barbier, Salim Keraï, Laboratoire Mate'riaux et Energies Renouvelables - Algeria

Reception/Dinner in Exhibit Hall: 6 pm – 7:30 pm

Wednesday, May 19 (2 sets of concurrent sessions)

Registration: 7 am – 7 pm

Continental Breakfast: 7 am – 8 am

8 am – 8:40 am
Cree Silicon Carbide Power Device Roadmap
Jim Richmond, Sei-Hyung Ryu, Anant Agarwal, John Palmour, Cree Inc.

Session WA1: SIC Devices I
Session Chair: James Richmond, Cree Inc.
8:40 am – 9:55 am

Electrical Operation of 6H-SiC MESFET at 500°C for 500 Hours in Air Ambient
David J. Spry, Phillip Neudeck, Robert Okojie, Liang-Yu Chen, Glenn Beheim, Roger Meredith, Wolfgang Mueller, Terry Ferrier, Ohio Aerospace Institute

Silicon Carbide Vertical Junction Field Effect Transistors Operated at Junction Temperatures Exceeding 300°C
J. Neil Merrett, V. Bondarenko, M. Mazzola, D. Seale, W.A. Draper, I. Sankin, J. R. B. Casady, J. B. Casady, SemiSouth Laboratories Inc.

Ti/AlNi/W Ohmic Contacts to P-Type SiC
Bang-Hung Tsao, Sam Liu, James Scofield, University of Dayton Research Institute

Session WA2: SI Devices I
Session Chair: Randy Normann, Sandia National Laboratory
8:40 am – 9:55 am

High Temperature 0.8 Micron 5V SOI CMOS for Analog/Mixed-Signal Applications
Bruce W. Ohme, Gary R. Gardner, Tom B. Lucking, Honeywell Defense & Space Electronics Systems

High Temperature SOI Voltage Reference, Voltage Regulator and Xtal Oscillator Driver Specified up to 225°C and Functional above 300°C
Vincent Dessard, Gonzalo Picun Pierre, Delatte Laurent Demeus, Cissoid S.A.

High Temperature Multiparameter Borehole Logging System for Geothermal and Oil Wells
Hang Ruan, Yaosheng Chen, Richard O. Claus, PhotoSonic/Optics Innovations

Break: 9:55 am – 10:15 am

Session WA3: SIC Devices II
Session Chair: James Scofield, Air Force Research Laboratory
10:15 am – 11:30 am

Diffusion / Oxidation Barrier Layers for Composite Metal Contacts to SiC
A. V. Adedeji, C. Ahyi, J.R. Williams, Auburn University; James Schofield, Air Force Research Laboratory; M. Horsey, S.E. Mohney, Penn State

Die Attach for High Temperature SiC Devices
Jeremy S. Junghans, Aicha Elshabini, Fred Barlow, Gangqiang Wang, University of Arkansas

Die Attach Technology for Reducing Stress in 500°C SiC MEMS Pressure Sensor
Karumbu Meyyappan, F. P. McCluskey, University of Maryland; L-Y Chen, NASA Glenn Research Center

Session WA4: SI Devices II
Session Chair: Bruce Ohme, Honeywell Defense & Space Electronics
10:15 am – 11:30 am

Miniature Hybrid Data Acquisition and Control System for High Temperature Service
Robert Schendel, Fred Wuensche, Texas Components Corporation

Branch-Based Design of Carry Calculation Cell for Ultra-Low Power and High-Temperature Applications
Ilham Hassoune, Amaury Neve, Jean-Didier Legat, Denis Flandre, Dice, UCL (Université Catholique de Louvain-La-NEUVE)

An Improved Algorithm for TU Pointer Processors in SDH Cross-Connect
Hamideh Sabaei, Abbas Iravani, Ahmad Khadem Zadeh, Iran Telecom Research Center (ITRC)

Lunch: 11:30 am – 12:30 pm

12:30 pm – 1:10 pm
Extreme Temperature Electronics Needs at JPL
Elizabeth Kolawa, NASA JPL

Session WP1: MEMS
Session Chair: Lawrence Matus, NASA Glenn Research Center
1:10 pm – 2:50 pm

A Silicon Carbide Pressure Sensor for High Temperature (600ºC) Applications
Ender Savrun, Vu Nguyen, Sienna Technologies, Inc.; Robert S. Okojie, NASA Glenn Research Center

A MEMS-Based High Temperature Pressure Release Valve Using LTCC
Jennifer English, Craig Newborn, David Coe, University of Alabama-Huntsville

Fabrication and Numerical Design of MEMS Based Silicon Micro-Jet Array Impingement Coolers
Kuldeep Saxena, Yangki Jung, Simon Ang, Fred Barlow, R.P.Selvam, Aicha Elshabini, University of Arkansas

Development of a High Temperature MEMS Accelerometer using Mixed Signal SOI
John C. Cole, Doug F. Braun, Jerry A. Sweet, Scott E. Verzwyvelt, Silicon Designs, Inc.

Break: 2:50 pm – 3:05 pm

Session WP2: Sensors
Session Chair: Harold Snyder, Physical Solutions
3:05 pm – 4:45 pm

Development of 225°C Magnetometers for MWD Applications
Steven P. Rountree, Diamond Research and Development, LLC

2.45 GHz Rectenna Designed for Wireless Sensors Operating at 500°C
George E. Ponchak, Zachary D. Schwartz, Jennifer L. Jordan, Alan N. Downey, Philip G. Neudeck, NASA Glenn Research Center

High Temperature Silicon Carbide Beam Sensors with Frequency Output
Boaz Kochman, Anthony D. Kurtz, Alexander A. Ned, Kulite Semiconductor Products, Inc.

Ultra High Temperature, Miniature, SOI Sensors for Extreme Environments
Alexander A. Ned, Anthony D. Kurtz, Kulite Semiconductor Products, Inc.

Reception/Dinner: 5:00 pm – 7 pm

Thursday, May 20 (1 set of concurrent sessions)

Registration: 7 am – 4 pm

Continental Breakfast: 7 am – 8 am

8 am – 8:40 am
High Temperature Power Electronics for the More Electric Aircraft
Joseph A. Weimer, Air Force Research Lab

Session THA1: Power Sources
Session Chair: David Ryan, Air Force Research Laboratory
8:40 am – 9:55 am

High Temperature Current to Current Opto-Coupler brings Commercial Temperature Circuit Applications to High Temperature Designs
Wayne Baldridge, Micropac Industries Inc.

Single Chamber Fuel Cell: A Power Source for High Temperature Electronics
Fatih Dogan, Toshio Suzuki, Piotr Jasinski, Harlan U. Anderson, University of Missouri-Rolla

High Temperature Electrolytes for Lithium Batteries
Victor Koch, David M. Ryan, Covalent Associates, Inc.

Session THA2: Materials II - Diamond
Session Chair: James Davidson, Vanderbilt University
8:40 am – 9:55 am

High Power and High Temperature Applications of CVD Diamond
Susan Heidger, Air Force Research Laboratory; Shlomo Rotter, UES, Inc.

High Temperature Performance of Diamond Field Emission Devices
Rohit S. Takalkar, Y. M. Wong, J. L. Davidson, W. P. Kang, Vanderbilt University

Construct and Properties of Microelectronic Diamond Resistors
Puteri Hamari, P. Taylor, K. Holmes, J. L. Davidson, W. P. Kang, Vanderbilt University

Break: 9:55 am - 10:10 am

Session THA3: Materials III
Session Chair: Harper Whitehouse, Linear Measurements, Inc.
10:10 am – 11:50 am

High Performance, High Temperature Perovskite Piezoelectric Ceramics
Thomas R. Shrout, Richard Eitel, Craig Stringer, Clive Randall, Penn State University

Piezoelectric Materials for High Temperature Applications
Harper J. Whitehouse, M. Pereira da Cunha, D.C. Malocha, P. Worsch, Linear Measurements, Inc.

Effect of Nonstoichiometry and Phase Development of High Temperature Piezoelectrics in La-Ti-O System
Ali Sayir, Serene C. Farmer, NASA Glenn Research Center

Thermal Stability of Ion-Beam Deposited CNx Thin Films
William C. Lanter, David C. Ingram, Asghar Kayani, Charles A. DeJoseph, Jr., Innovative Scientific Solutions, Inc.

Lunch: 11:50 am – 1 pm

Session THP1: Capacitors I
Session Chair: Walter Schultze, Alfred University
1 pm – 3 pm

Comparison of High Temperature Capacitors
David Chavira, Sandia National Laboratories

High Temperature Ceramic Multilayer Capacitors
Edward F. Alberta, W. S. Hackenberger, C. A. Randall, T. R. Shrout, TRS Technologies, Inc.

High Temperature Film Capacitors at Dearborn Electronics
Mark Carter, Dearborn Electronics

Dielectric Materials Development for High-Temperature Capacitors
Eugene Furman, M. Lanagan, T.R. Shrout, S. Y. Young, B. Jones, S. Kwon, The Pennsylvania State University

High Temperature Accelerated Life Testing
Donald C. Leo, Casey Crandall, Wright Capacitors, Inc.

Break: 3 pm - 3:15 pm

Session THP2: Capacitors II
Session Chair: Thomas Shrout, Penn State University
3:15 pm – 4:55 pm

Fabrication and Characterization of Integrated PLZT Thick Film Capacitors Formed via Aerosol Deposition
David Williams, Bruce A. Tuttle, Paul G. Clem, Sandia National Laboratories

Self-Packaged Boron Nitride Capacitor Chips for High Temperature Applications
Nacer Badi, C. Boney, A. Bensaoula, University of Houston

Bond Valence Approach to the Study of Dopant Effects on the Bismuth Sodium Titanate System of High Temperature Dielectric Materials
Conor J. Walsh, Walter A. Schulze, New York State College of Ceramics at Alfred University

High Temperature Capacitors Based on (K1/2Bi1/2)TiO3-BaTiO3 System
Yuji Hiruma, Hajime Nagata, Tadashi Takenaka, Tokyo University of Science

Concluding Remarks: 5 pm