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International Conference on
High Temperature Electronics
(HiTEC 2008)

Hotel Albuquerque Old Town
Albuquerque, New Mexico USA
May 12-15, 2008

Conference Events and Technical Program
May 12-15, 2008
Tabletop Exhibition
May 13-14, 2008

General Chair: R. Wayne Johnson, Auburn University
General Co-Chair: Randy Normann, Sandia National Laboratories

Technical Chair: Patrick McCluskey, University of Maryland
Technical Co-Chair: Susan L. Heidger, Air Force Research Laboratory/RDHP

Early Registration and Hotel Deadlines: April 11, 2008


Register On-Line | Hotel | PDF of Program


Monday, May 12

Registration: 4 pm – 6:30 pm

Opening Reception: 6:30 pm – 8:00 pm

Tuesday, May 13

Registration: 7:00 am – 7:30 pm

Continental Breakfast: 7:00 am – 7:45 am

Exhibit Hours: 12:00 noon – 7:30 pm
Refreshment Breaks, Lunch and Reception in the Exhibit Hall

Reception in the Exhibit Hall: 6:00 pm – 7:30 pm

Opening Remarks: 7:45 am – 8:00 am
Conference Chairs

Plenary Session
Chair: Patrick McCluskey, University of Maryland

8:00 am – 10:00 am

High Temperature Electronics - A European Perspective
Colin Johnston, Faraday Advance - Materials KTN Oxford

Progress in High Temperature Power Electronics for the More Electric Aircraft
Joseph Weimer, U.S. Air Force

High Temperature Electronics for Future CAR
Laura Marlino, Oak Ridge National Laboratory

Break in Foyer: 10:00 am – 10:30 am

TA1 - SOI Devices I
Chair: Bruce Ohme, Honeywell International

10:30 am – 12:00 noon

SOI Based Integrated Circuits for High Temperature Applications
M.A. Huque (University of Tennessee), B.J. Blalock, C. Su, R. Vijayaraghavan, S.K. Islam, L.M. Tolbert

Study of Circular Gate Devices SOI nMOSFET at High Temperatures
Luciano Mendes Almeida (Centro Universitario da FEI Brazil), Marcello Bellodi

Analysis of Annular MOSFET Leakage at High Temperature
Sheshnag Rangaraj (Oklahoma State University), Chris Hutchens

TA2 - Packaging I
Chair: David Shaddock, General Electric Research

10:30 am – 12:00 noon

High Temperature and High Heat Flux Thermal Management for Electronics
William G. Anderson (Advanced Cooling Technologies, Inc.), David B. Sarraf, Scott D. Garner

Effect of Bonding Temperature, Post-Bond Heat Treatment and Extended Range Thermal Cycling on the Reliability of Al Wire Bonds
Loh Wei Sun (The University of Sheffield), S.C. Hogg, R.J. Ikujeniya, M.R. Corffield, P. Agyakwa, C.M. Johnson

Integrated Microheater for Accelerated Thermal Cycling of Microelectronics Ball Bonds
Michael Mayer, University of Waterloo Canada

Lunch Break in the Exhibit Hall: 12:00 noon – 1:30 pm
Lunch Served at 12:30

TP1a - SOI Devices II
Chair: Randy Normann, Sandia National Laboratories

1:30 pm – 3:00 pm

Junction Temperature Measurement and Thermal Control of a DC/DC Converter for High Temperature Applications
Andreas Koenig (RWTH Aachen University, ISEA), Thomas Plum, Peter Fidler, Rik De Doncker

Extreme Temperature Switch Mode Power Supply based on Vee-square Control Using SiC, Si on Sapphire, Hybrid Technology
Vijayaraghavan Madhuravasal (Oklahoma State University), Srinivasan Venkataraman, Chia-Ming Liu, Chris Hutchens

A High Temperature (225 C+) Silicon-On-Insulator (SOI) Gate Driver IC for Silicon Carbide (SiC) JFET
Edgar Cilio (APEI), Jared Hornberger, Robert Schupbach, Alexander Lostetter, Allan Mantooth

TP2a - Capacitors I
Chair: Mike Lanagan, Pennsylvania State University

1:30 pm – 3:00 pm

High Temperature Glass-based Dielectrics for Capacitors
Michael Lanagan (Penn State University), Badri Rangarajan, Steve Perini, Carlo Pantano, Samual Corzone

Current-Voltage Testing of Candidate Dielectric Materials for 500 C SiC Integrated Circuits
Carl W. Chang (ASRC Aerospace and NASA Glenn Research Center), Philip G. Neudeck, Glenn M. Beheim, David J. Spry

Fabrication and Characterization of Wound Capacitors using Amorphous Silicon Dioxide as the Dielectric Material
Keith D. Jamison (Nanohmics, Inc.), R.D. Wood, B.G. Zollars, M.E. Kordesch, M. Carter

Break in the Exhibit Hall: 3:00 pm – 3:45 pm

TP1b - SIC Devices
Chair: Jeff Casady, SemiSouth Laboratories

3:45 pm – 5:45 pm

6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500C
Philip G. Neudeck (NASA-Glenn Research Center), David J. Spry, Liangy Chen, Carl W. Chang, Glenn M. Beheim, Robert S. Okojie, Laura J. Evans, Roger Meredith, Terry Ferrier, Michael J. Krasowski, Norman F. Prokop

High Temperature DC and Switching Performance of 20A 800V Normally-off SiC VJFET
I. Sankin (SemiSouth Laboratories, Inc.), N. Merrett, W. King, V. Bondarenko, A. Ritenour, R. Kelly, W. Draper, D. Sheridan

Reliable Silicon Carbide MOSFET Operation at 300C Junction Temperature
Jim Richmond (Cree, Inc.), Brett Hull, Sei-Hyung Ryu, Anant Agarwal, John Palmour, Jim Scofield

300 C Silicon Carbide JFET Technology for Power Conditioning
Victor Veliadis (Northrop Grumman), Harold Hearne, Megan McCoy, Ty McNutt, Paul Potyraj

TP2a - Capacitors II
Chair: John Witham, Sandia National Laboratories

3:45 pm – 5:45 pm

High Dielectric Constant Capacitors for High Temperature Power Inverters in Hybrid Vehicles
U. Balachandran (Argonne National Laboratories), B. Ma, D.K.Kwon, M. Narayanan

High Temperature and High Pressure Performance of Ceramic Chip Capacitors-Study of Leakage Current
Rolf Johannessen (SINTEF ICT, Norway), Froydis Oldervoll, Frode Strisland, Per Ohlckers

Defect Leakage Current Noise in Multilayer Ceramic Capacitors - A New Reliability Sorting Procedure
Harold L. Snyder, Jr., Physical Solutions

Temperature Dependence of Electrical Breakdown in Polymer Dielectrics
Cheolhong Min (Penn State University), Michael Lanagan, Thomas Shrout

Exhibit Hall Reception: 6:00 pm – 7:30 pm

Wednesday, May 14

Registration: 7:00 am – 5:00 pm

Continental Breakfast: 7:00 am – 8:00 am

Exhibit Hours: 10:00 am – 3:00 pm
Refreshment Breaks and Lunch in the Exhibit Hall

Plenary Session II
Chair: R. Wayne Johnson, Auburn University

8:00 am – 10:00 am

Challenges for Power Electronics in Future Electricity Networks
C. Mark Johnson (University of Nottingham), Jon Clare, Greg Asher

A New Geothermal Plan, EGS
Randy Normann, Sandia National Laboratory

Modeling of High Temperature Device and Circuit Performance
Alan Mantooth, University of Arkansas

 

Student Paper Competition Award Presentation
Following Conclusion of Plenary II

Sponsored by:

Break in the Exhibit Hall: 10:00 am – 10:30 am

WA1 - Memory / Microprocessors
Chair: Chris Hutchens, Oklahoma State University

10:30 am – 12:00 noon

General Purpose 256 Kbit Non-Volatile Memory for Operation to 250C
Bruce Ohme, Honeywell International

Microcontroller with Memory for Extreme Temperature Applications
R. Sridharan (Oklahoma State University), H.M. Soo, C. Hutchens, C.M. Liu, Z. Yuan, S. Velore, J. Gaisler, M. Willet, V. Madhuravasal

Single Package Re-configurable Processor for Data Acquisition at 250C
Thomas Romanko (Honeywell International), Michael Johnson, Bruce Ohme

WA2 - Packaging II
Chair: Laura Marlino, Oak Ridge National Laboratory

10:30 am – 12:00 noon

Packaging Technology for High Temperature SiC Capacitive Pressure Sensors
Liangyu Chen (OAI / NASA-Glenn Research Center), Glenn M. Beheim, Laura Evans, Roger D. Meredith, Jeff Melzak

High Temperature, High Power SiC Module Design: Packaging Architecture and Material Consideration
John Shen (University of Central Florida), Brian Grummel, Ryan McClure, Ali Gordon, Allen Hefner

High Temperature Planar Package with Sintered Nanosilver Paste Interconnects
Naili Yue (Virginia Tech), Ying Lu, Jesus N. Calata, Thomas G. Lei, Guo-Quan Lu, Khai Ngo

Lunch in the Exhibit Hall: 12:00 pm – 1:00 pm

WP1a - Devices
Chair: Bruce Geil, US Army Research Laboratory

1:00 pm – 2:30 pm

Temperature Tolerance Characteristics of the Nanodiamond Lateral Vacuum Field Emission Device
J.L. Davidson (Vanderbilt University), K. Subramanian, W.P. Kang, R. Schroeder

Thermally-Adjustable Resistors for Fine-Tuning High-Temperature Electronics Circuits
Les M. Landsberger (Microbridge Technologies Canada, Inc.), Rick Williston, Bowei Zhang, Oleg Grudin, Gennadiy Frolov, Tommy Tsang

Characterization of Power MOSFET Bipolar Switches at High Temperature
Steven A. Morris, Baker Hughes/INTEQ

WP2a - Packaging III
Chair: Harold Snyder, Physical Solutions

1:00 pm – 2:30 pm

Low Temperature Sintering of a Nanoscale Silver-Gold Paste for High Temperature Chip Attachment
Jesus N. Calata (Virginia Tech), Guo-quan Lu, Thomas Ge. Lei, Mary Gail Koebke, Bruce Geil

High Temperature Die Attach
Pedro O. Quintero (University of Maryland, College Park), Timothy Oberc, F. Patrick McCluskey

Die Attach for High Temperature Electronics Packaging
R. Wayne Johnson (Auburn University), Ping Zheng, Alberez Wiggins

Break in the Exhibit Hall: 2:30 pm – 3:00 pm

WP1b - High Temperature Batteries
Chair: David Ryan, Air Force Research Laboratory

3:00 pm – 5:30 pm

A Battery Performance Monitoring Solution in a Down-hole Environment
Paul Moody, IntelliServ

High Temperature Electrochemical Energy Storage
Scott Preston (Mobile Energy Products, Inc.), Ron Guidott, Za Johnson, Brian Burns

State of Capacity Indicator for Primary Lithium Battery Packs used in Oil Well Logging Applications
Jon Carroll (Electrochem Commercial Power), Anwar Master, Tom Skwara

Battery Performance Under Pulsed Discharge Conditions in High Temperature Applications
Arden P. Johnson (Electrochem Commercial Power), Konstantin K. Tikhonov

Altairnano Battery Performance for High Temperature Downhole Applications
Chet Sandberg, Altairnano, Inc.

WP2b - Packaging IV
Chair: Milton Watts, Quartzdyne Electronics

3:00 pm – 5:30 pm

Viability of an Alternative High Temperature Surface Mount Component Attach
Timothy Oberc (University of Maryland, College Park), Pedro O. Quintero, F. Patrick McCluskey

Microstructure and Mechanical Behavior of High Temperature Solders
Junghyun Cho (State University of New York at Binghamton), Harry Schoeller, Shubhra Bansal, Aaron Knobloch, David Shaddock

High Temperature Electronics Packaging based on Polyimide Flex
David Shaddock (General Electric Research), Aaron J. Knobloch, Shubhra Bansal, Chris Kapusta, Harry Schoeller, Junghyun Cho

Assessment of the Reliability of High Temperature Electronics Packaging Technology
Steve Riches (GE Aviation Systems, UK), Colin Johnston, Jim Gulliver, Mark Langley, Robin Pittson, Mike Firmstone

Rapid Thermal Processed Attachment Materials
Adam McClure (University of Maryland, College Park), Pedro Quintero, Patrick McCluskey, Bruce Geil

 

Thursday, May 15

Registration: 7:00 am – 12:20 pm

Continental Breakfast: 7:00 am – 8:00 am

Plenary Session III
Chair: Susan Heidger, Air Force Research Laboratory

8:00 am – 10:00 am

Design Considerations for High Temperature Hybrid Manufacturability
Milton Watts, Quartzdyne Electronics

Reliability Assessment of High Temperature Electronics and Packaging Technologies for NASA Missions
Yuan Chen (Jet Propulsion Laboratory), Linda Del Castillo, Nazeeh Aranki, Chris Assad, Mike Mazzola, Mohammad Mojarradi, Elizabeth Kolawa

Army High Temperature Electronics Activities and Needs
Bruce Geil, Army Research Laboratory

Break in the Foyer: 10:00 am – 10:20 am

THA1 - Sensors
Chair: Liang-Yu Chen, OAI/NASA Glenn Research Center

10:20 am – 12:20 pm

Development of a Temperature Sensor for Jet Engine and Space Mission Applications
Dennis Culley (NASA-Glenn Research Center), Richard L. Patterson, Ahmad Hammoud, Malik Elbuluk

SiC MEMS Capacitive Pressure Sensor for High Temperature Applications
Jeffrey M. Melzak (FLX Micro, Inc.), Glenn M. Beheim, Laura Evans, Roger D. Meredith, Lianyu Chen

A Battery-less Transponder for Extreme Environment Telesensing and RFID
Greg Horler (Instrumentel Ltd., Leeds University), D. McGorman, N. Curry, J. Birch

High Temperature Piezoelectric Single Crystal ReCa4O (BO3)3 for Sensor Applications
Shujun Zhang (Penn State University), Thomas R. Shrout, Yiting Fei, Bruce H.T. Chai

THA2 - Packaging (Substrates)
Chair: Colin Johnston, Faraday Advance - Materials KTN

10:20 am – 11:50 am

Stress Management in a High Temperature Multilayered Composite Structure
Douglas C. Hopkins (University of Buffalo), David W. Kellerman, Kevin Enser

Dielectric Performance of Sapphire at High Temperatures
Liangyu Chen, OAI / NASA-Glenn Research Center

Large Area Single Crystal Diamond Wafers for High Temperature Electronics
Patrick Doering (Apollo Diamond), Josh Tower, Alfred Genis, Robert Linares

Closing Remarks
Followed by Organizers Meeting: 12:30 pm – 2:00 pm


Register On-Line

Early Registration and Hotel Deadlines: April 11, 2008


Hotel Information -- Hotel Deadline: April 11, 2008
Hotel Albuquerque Old Town
Albuquerque, New Mexico USA
For reservations, call (505) 843-6300 or (800) 237-2133

Group rate -- $159 Single/Double

Mention IMAPS or the International Microelectronics And Packaging Society.



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IMAPS-International Microelectronics And Packaging Society and The Microelectronics Foundation
611 2nd Street, N.E., Washington, D.C. 20002
Phone: 202-548-4001

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