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International Conference on
High Temperature Electronics
(HiTEC 2010)

May 11-13, 2010
Hyatt Regency
330 Tijeras NW
Albuquerque, New Mexico 87102

Conference Events and Technical Program
May 11-13, 2010
Tabletop Exhibition
May 11-12, 2010

Organizing Committee:
Wayne Johnson, Auburn University - johnsr7@auburn.edu
Colin Johnston, Oxford Applied Technology – UK - colin.johnston@materials.ox.ac.uk
F. Patrick McCluskey, University of Maryland - mcclupa@calce.umd.edu
Susan L. Heidger, Air Force Research Laboratory - Susan.Heidger@kirtland.af.mil
Randy Normann, Perma Works, LLC - randy@permaworks.com

Early Registration Deadline: April 9, 2010
Hotel Deadline: April 9, 2010


Download PDF Program
Tabletop Exhibit Information
Speaker Information | Hotel Information


Technical Program

Tuesday, May 11

Registration: 7:15 am - 7:00 pm

Breakfast: 7:15 am - 7:45 am

Opening Remarks: 7:45 am - 8:00 am
Conference Chairs

Exhibit Hours: 12:00 pm – 7:30 pm
(Afternoon Refreshment Break, Lunch & Reception will be held in the Exhibit Area.)

Plenary Talk: 8:00 am – 8:40 am
Title: NIST High Temperature Electronics Research

Speaker: Al Hefner, NIST


Session TA1: High Temperature Packaging: Die Attach
Chair: Al Hefner, NIST
8:45 am – 12:15 pm

Assessing the Reliability of Die Attach Materials in Electronic Packages for High Temperature Applications
M. Sousa, S. Riches, C. Johnston, P. S. Grant, University of Oxford

Mechanical and Thermal Properties of TLPS Die Attach
F. Patrick McCluskey, K. Smith, University of Maryland – CALCE

Metallurgy for SiC Die Attach for Operation at 500°C
R. Wayne Johnson, Ping Zheng, Phillip Henson, Auburn University; Liangyu Chen, Ohio Aerospace Institute/NASA Glenn Research Center

Session TA2: High Temperature Integrated Circuits / Memory
Chair: Colin Johnston, Oxford Applied Technology - UK
8:45 am – 12:15 pm

High Temperature CMOS Reliability and Drift
Shane Rose, Quartzdyne Inc.

High-Temperature, Bulk-CMOS Integrated Circuits for a Distributed FADEC System
Daniel Howe, Steven Majerus, Steven Garverick, David Hiscock, Walter Merrill, Scientific Monitoring Incorporated

Evaluation of Commercial SOI Driver Performances While Operated in Extreme Conditions (up to 200°C)
Khalil El Falahi, B. Allard, D. Tournier, D. Bergogne, Universite de Lyon

Break: 10:15 am – 10:45 am

Swelling Phenomena in Sintered Silver Die Attach Structures at High Temperatures: Reliability Problems and Solutions for an Operation Above 350°C
Nicolas Heuck, S. Müller, A. Bakin, A. Waag, Institute for Semiconductor Technology

Migration of Sintered Nanosilver Die-attach Material atHigh Temperatures in Dry Air
Guo-Quan Lu, Yunhui Mei, Dimeji Ibitayo, Xu Chen, Shufang Luo, Virginia Tech

Assessment of Au-Ge Die Attachment for an Extended Junction Temperature Range in Power Applications
Satoshi Tanimoto, Kohei Matsui, Yoshinori Murakami, Hiroshi Yamaguchi, Hajime Okumura, Nissan Motor Co., Ltd.

“Digital” Vacuum Microelectronics: Carbon Nanotube-Based Inverse Majority Gates for High Temperature Applications
Harish Manohara, M. Mojarradi, R. Toda, R. Lin, A. Liao, Jet Propulsion Laboratory

Compact Modeling of the High Temperature Effect on the Single Event Transient Current Generated by Heavy Ions in SOI 6T-SRAM
El Hafed Boufouss, Joaquin Alvarado, Denis Flandre, Université Catholique de Louvain (UCL)

A High-Temperature Folded-Cascode Operational Transconductance Amplifier in 0.8-µm BCD-on-SOI
Chiahung Su, S. K. Islam, B. J. Blalock, L. M. Tolbert, University of Tennessee


Lunch in Exhibit Area: 12:15 pm – 1:15 pm

Plenary Talk: 1:20 pm – 2:20 pm
Title: High Temperature Vision for Geothermal Research

Speaker: Doug Blankenship, DOE


Session TP1: High Temperature Packaging: General
Chair: Doug Blankenship, DOE
2:20 pm – 6:05 pm

Application of High Temperature Electronics Packaging Technology to Signal Conditioning and Processing Circuits
S. T. Riches, K. Cannon, GE Aviation Systems - Newmarket; C. Johnston, P. Grant, M. Sousa, Oxford University; J. Gulliver, Sonex Wireline; M. Langley, Meggitt U.K.; R. Pittson, S. Serban, D. Baghurst, Gwent Electronic Materials; M. Firmstone, Thermastrate Ltd.

Characterization of Thick Film Technology for 300°C Packaging
R. Wayne Johnson, Rui Zhang, Auburn University; Vinayak Tilak, Tan Zhang, David Shaddock, GE Global Research Center

Parylene HT: A High Temperature Vapor Phase Polymer for Electronics Applications
Rakesh Kumar, Specialty Coating Systems, Inc.

Session TP2: SiC Switch Technologies
Chair: MohammadMojarradi, NASA
2:20 pm – 6:05 pm

Comparison of High Temperature Operation of Silicon Carbide MOSFETs and Bipolar Junction Transistors
Jim Richmond, Khiem Lam, Sei-Hyung Ryu, Quingchun (Jon) Zhang, Brett Hull, Mrinal Das, Albert Burk, Anant Agarwal, John Palmour, Cree Inc.

High Temperature Silicon Carbide DMOSFET Based DC-DC Converter
Siddharth Potbhare, Akin Akturk, Neil Goldsman, James M. McGarrity, Anant Agarwal, University of Maryland

High-Temperature Switching Performance of Normally-off SiC JFET's Compared to Competing Approaches
Jeffrey B. Casady, David C. Sheridan, Andrew Ritenour, SemiSouth Laboratories, Inc.

Break in Exhibit Area: 3:55 pm – 4:30 pm

The Behaviour of Au-Au Wire Bonds in Extreme Environments
Daniel Shepherd, Patrick Grant, Colin Johnston, Oxford University Materials; Steve Riches, GE Aviation

High Temperature Solders Containing Aluminum
Hiren Kotadia, Omid Mokhtari, Melanie Bottrill, Mike Clode, Mark Green, Samjid Mannan, King's College London

Thermomechanical Stresses in Copper Films at Elevated Temperature
Martin Lederer, Brigitte Weiss, University of Vienna; Javad Zarbakhsh, Rui Huang, KAI GmbH; Thomas Detzel, Infineon Technologies Austria AG

1200V 6A High Temperature SiC BJTs
Anders Lindgren, Martin Domeij, Transic AB

High Temperature Ultra High Voltage SiC Thyristors
Ranbir Singh, E. Lieser, S. Jeliazkov, S. Sundaresan, GeneSiC Semiconductor Inc.

Study of Failure Mechanisms of IGBT Inverters Operating in Combined Aeronautical Constraints
Hassan Abbad El Andaloussi, Eric Woirgard, Stéphane Azzopard, University of Bordeaux; Pascal Rollin, Technofan; Tony Lhommeau, Hispano-Suiza

Reception in Exhibit Area: 6:10 pm – 7:30 pm

Wednesday, May 12

Registration: 7:15 am - 6:00 pm

Breakfast: 7:15 am - 8:00 am

Exhibit Hours: 10:00 am – 3:00 pm
(Refreshment Break & Lunch will be held in the Exhibit Area.)

Plenary Talk: 8:00 am – 8:40 am
Title: USAF Integrated Vehicle Energy Technology: InVEnT Program

Speaker: Joe Weimer, USAF

 

Student Paper Competition Award
Sponsored by:

Session WA1: High Temperature Passives: Capacitor Technologies
Chair: David Shaddock, General Electric Global Research
8:45 am – 11:15 am

Capacitor Characterization Study for a High Power, High Frequency Converter Application
Jeffery T. Stricker, Navjot Brar, Jim Scofield, Hiroyuki Kosai, Biswajit Ray, Seana McNeal, Jennifer DeCerbo, William Lanter, Tyler Bixel, US Air Force Research Laboratory

High Temperature Capacitors Based on [0001] and [1120] Sapphire Dielectrics
Liang-Yu Chen, Ohio Aerospace Institute (OAI)/NASA Glenn Research Center

Demonstrated Performance Characteristics for Improved High Temperature Ceramic Capacitors Intended for Use in Extreme, Harsh Environments
Mustafa A. Syammach, Michael J. Roach, Fauzi A. Syammach, Mustapha Habibi, Eclipse NanoMed, LLC

Session WA2: SiC Based Inverters & Converters
Chair: Joe Weimer, USAF
8:45 am – 12:15 pm

New High Temperature Electronic Components for Power Management and Motor Control Applications
Pierre Delatte, V. Dessard, A. Saib, N. Pequignot, G. Picún, L. Demeûs, L. Martinez, T. Krebs, J.-C. Doucet, CISSOID S.A.

The Development and Qualification of a DC-DC Converter for 225°C (437°F) Operating Temperature
Bob Hunt, Chris Andrews, C-MAC MicroTechnology

High Temperature Performance of a 2 kW Interleaved DC-DC Converter
Hiroyuki Kosai, Seana McNeal, Brett Jordan, James Scofield, Biswajit Ray, UES, Inc.

Break in Exhibit Area: 10:15 am – 10:45 am

Nanocomposite Film Dielectrics for High Temperature Power Conditioning Capacitors
Kirk Slenes, Lew Bragg, TPL, Inc.

High Temperature Inverter for Airborne Application
Fabien Dubois, Dominique Bergogne, Herve Morel, Regis Meuret, University of Lyon

Effect of High Temperature Ageing on Active and Passive Power Devices
Remi Robutel, Cyril Buttay, Christian Martin, Christophe Raynaud, Simeon Dampieni, Dominique Bergogne, Universite de Lyon

Design of High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter
Remi Robutel, Christian Martin, Herve Morel, Cyril Buttay, Dominique Bergogne, Universite de Lyon; Nicolas Gazel, SAFRAN Group


Lunch in Exhibit Area: 12:15 pm – 1:15 pm

Plenary Talk: 1:20 pm – 2:20 pm
Title: NASA Needs for High Temperature Electronics for Space Systems

Speaker: Mohammad Mojarradi, NASA


Session WP1: High Temperature Passives: Capacitors & Resistors
Chair: Randy Normann, Perma Works, LLC

2:20 pm – 6:05 pm

A Comparison of Multilayer Ceramic Capacitor Technologies for High Temperature Applications
Craig Nies, Scott Harris, AVX Corporation - Advanced Products and Technology Center

Development of High Voltage and High Capacitance Stacked Ceramic Capacitors for High Temperature Applications
John Bultitude, John McConnell, Abhijit Gurav, Travis Ashburn, Jeff Franklin, Lonnie Jones, Xilin Xu, Jim Magee, Mark Laps, KEMET Electronics Corporation

Robust Class-I BME Ceramic Capacitors for High Temperature Applications
Abhijit Gurav, Xilin Xu, Jim Magee, Jeff Franklin, Travis Ashburn, KEMET Electronics Corporation

Session WP2: SiC Power Modules & Amplifiers
Chair: Army (TBD)
2:20 pm – 6:05 pm

High Temperature 230°C Isolated Power Supply
R. Schupbach, B. Reese, R. Shaw, J. Hornberger, A. Lostetter, APEI, Inc.

Performance and Reliability Characteristics of 1200 V, 100 A, 250°C Half-Bridge SiC MOSFET-JBS Diode Power Modules
James Scofield, Neil Merrett, Jim Richmond, Anant Agarwal, Scott Leslie, US Air Force Research Laboratory

High Temperature 250°C Silicon Carbide Power Modules with Integrated Gate Drive Boards
R. Schupbach, B. McPherson, J. Hornberger, R. Shaw, B. Reese, A. Lostetter, B. Rowden, K. Okumura, T. Otsuka, A. Mantooth, APEI, Inc.

Break: 3:55 pm – 4:30 pm

Reliability Assessment of Passives for 300°C using HALT
David Shaddock, Tan Zhang, Vinayak Tilak, General Electric Global Research

300°C Resistor Drift and Failure Analysis
Mark Hahn, Ron Smith, Milton Watts, Quartzdyne Electronics

Development of a 300°C Capable SiC Based Operational Amplifier
Vinayak Tilak, Cheng-Po Chen, Peter Losee, Emad Andarawis, GE Global Research Center

Development of a SiC SSPC Module with Advanced High Temperature Packaging
Douglas C. Hopkins, Yuanbo Guo, Herbert E. Dwyer, James D. Scofield, DensePower, LLC

High Temperature Power Module Fabrication
R. Wayne Johnson, Michael Palmer, Auburn University; Tracy Autry, Rizal Aguirre, Victor Lee, Microsemi, Inc.

Thursday, May 13

Registration: 7:15 am - 3:30 pm

Breakfast: 7:15 am - 8:00 am

Plenary Talk: 8:00 am – 8:40 am
Title: Hybrid Electric Vehicle High Temperature Needs

Speaker: Laura Marlino, Oak Ridge National Laboratory

 

Session THA1: Hybrid Electric Vehicles Components
Chair: Laura Marlino, Oak Ridge National Laboratory
8:45 am – 11:45 am

Edge-Controlled Mechanical Failure of Si and SiC Semiconductor Chips
A. A. Wereszczak, O. M. Jadaan, T. P. Kirkland, Oak Ridge National Laboratory

High-Temperature, High-Dielectric-Constant Capacitors for
U. (Balu) Balachandran, M. Narayanan, B. Ma, Argonne National Laboratory

SiC High Temperature Power Module Electrical Evaluation Procedure
Puqi Ning, Fred Wang, Virginia Tech - (CPES)

Session THA2: MEMS & Sensors
Chair: Liangyu Chen, Ohio Aerospace Institute (OAI)/NASA Glenn Research Center
8:45 am – 12:15 pm

Piezoelectric Structural Sensor Technology for Extreme Environments
Edward Alberta, Raffi Sahul, Wesley Hackenberger, TRS Technologies; Xiaoning Jiang, North Carolina State University; Shujun Zhang, Thomas Shrout, The Pennsylvania State University

Performance and Reliability of MEMS Gyroscopes at High Temperatures
F. Patrick McCluskey, C. Patel, University of Maryland - CALCE; D. Lemus, TRX Inc.

Development of High Temperature Acoustic Transducer Materials for Downhole Imaging in Geothermal Applications
Edward Alberta, Raffi Sahul, Seongtae Kwon, Kevin Snook, Wesley Hackenberger, TRS Technologies; Shujun Zhang, Thomas Shrout, The Pennsylvania State University

Break: 10:15 am – 10:45 am

Rugged ICs Against Corrosion, Shock Plus Hotter Temperatures
James J. Wang, Power Gold LLC

A Universal BCD-on-SOI Based High Temperature Short Circuit Protection for SiC Power Switches
Liang Zuo, S. K. Islam, M. A Huque, B. J. Blalock , L. M. Tolbert, University of Tennessee

Packaging Technology for High Temperature Capacitive Pressure Sensors
Liang-Yu Chen, Ohio Aerospace Institute/NASA Glenn Research Center; Glenn M. Beheim, Roger D. Meredith, NASA Glenn Research Center

Modeling and Simulation of the Thermal Drift Characteristics of the Piezo Resistive Pressure Sensor
Redouane Otmani, Nasreddine Benmoussa, Kherreddine Ghaffour, Abou Bekr Belkaïd University-Research Unit of Materials and Renewable Energies URMER

SiGe Amplifier and Buffer Circuits for High Temperature Applications
Dylan B. Thomas, Nelson E. Lourenco, John D. Cressler, Steven Finn, Georgia Tech

Lunch: 12:15 pm – 1:15 pm

Session THP1: High Temperature Batteries
Chair: Joe Henfling, Sandia National Laboratories
1:20 pm – 2:50 pm

New Rechargeable Battery for Application in a Wide Temperature Range
Josip Caja, T. Don Dunstan, Mario Caja, Electrochemical Systems, Inc.

High Temperature Lithum Alloy Cells with Improved Low Temperature Performance
Arden P. Johnson, Cuiyang Wang, John S. Miller, Electrochem Solutions, Inc.

Practical Oil Field Requirements for New High-Temperature Batteries
Randy Normann, Brett Bouldin, Perma Works LLC

 

Roundtable Discussion
2:50 pm – 3:30 pm
How do Wide Band Gap Devices Enter Commercial Market in Competition with Silicon Devices?

Closing Remarks: 3:30 pm


Early Registration and Hotel Deadlines: April 9, 2010

 
Corporate Sponsors:

HiTEC Corporate Sponsor - CISSOID

© Copyright 2010 IMAPS - All Rights Reserved
IMAPS-International Microelectronics And Packaging Society and The Microelectronics Foundation
611 2nd Street, N.E., Washington, D.C. 20002
Phone: 202-548-4001

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