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International Conference on
High Temperature Electronics
(HiTEC 2014)

May 13-15, 2014
Albuquerque Marriott Pyramid North
5151 San Francisco Rd NE
Albuquerque, New Mexico 87109 USA

Conference Events and Technical Program
May 13-15, 2014
Tabletop Exhibition
May 13-14, 2014

General Co-Chairs:
Wayne Johnson, Tennessee Tech University -
Colin Johnston, Oxford University -

Technical Co-Chairs:
Susan L. Heidger, Air Force Research Laboratory -
F. Patrick McCluskey, University of Maryland -
Randy Normann, Perma Works, LLC -

Proceedings Papers Now Linked to IMAPSource below!

Technical Program

HiTEC 2014 continues the tradition of providing the leading biennial conference dedicated to the advancement and dissemination of knowledge of the high temperature electronics industry. Under the organizational sponsorship of the International Microelectronics Assembly and Packaging Society, HiTEC 2014 will be the forum for presenting leading high temperature electronics research results and application requirements. It will also be an opportunity to network with colleagues from around the world working to advance high temperature electronics.


Monday, May 12 (11am-7pm) - PRE-CONFERENCE SHORT COURSE

Registration: 10:00 am - 7:00 pm
Course Runs: 11:00a m - 7:00pm

Includes: PDC Lunch: 1:00 pm - 2:00 pm & Afternoon Break: 4:30 pm - 4:45 pm

High Temperature Electronics
Professional Development Course (PDC - Short Course)
PDC Instructor: Randall Kirschman, Consultant


Course Description: High-Temperature Electronics (HTE) is a valuable option for substantially improving overall system performance. Operating temperature may be thought of as an additional design parameter when justified by system performance requirements. The course is updated and expanded for 2014.

Applications of HTE include many areas: petroleum and geothermal wells, ground vehicles, aircraft, Solar System exploration, and electric power. Relocating electronic subsystems to high temperature can improve overall system efficiency, decrease size and weight, simplify maintenance and improve reliability. At the same time there are many technical challenges, related to materials and their interactions, component behavior, circuit design and interfacing.

The focus of this course is semiconductor electronics at high temperatures: device behavior, applications, advantages and drawbacks, technical issues and present situation. Basic materials characteristics related to electronics at high temperatures, and passive electronic component behavior are included, as well as assembly, packaging and interconnection. The temperature range covered in this course extends from +125C upward, as high as 1000C. Depending on the temperature range, HTE semiconductor devices may be based on Si, SiGe, GaAs, SiC, GaN, C (diamond) and other materials.

Although future developments in electronics are difficult to predict, it is likely that high-temperature electronics will find increased use for enhanced performance in extreme environments.


I. - Introduction and definitions, course description & objectives, temperature ranges, history and background.
II. - Applications: oil and geothermal well measurements, space exploration and power, aircraft,  automotive. Reasons for high-temperature operation of electronics; benefits and drawbacks.
III. - Materials behavior - non-semiconductors: thermal conductivity, thermal expansion, heat capacity, thermal diffusivity, electrical conduction, glass transition temperature, strength, temperature capabilities, dielectric properties, magnetic properties.
IV. - General semiconductor materials behavior: carrier generation, mobility, electrical conductivity, behavior and capabilities of Ge, Si, SiGe, GaAs, GaN, SiC, BN, C (diamond), etc. - semiconductor device temperature capabilities/limits.
V. - Silicon device behavior: diodes, bipolar transistors, FETs (JFETs, MOSFETs, etc.), power devices (MOSFETs, IGBTs, thyristors, etc.), integrated circuits (bipolar, CMOS, SOI); SiGe devices.
VI. - Devices based on medium-bandgap semiconductor materials: GaAs, AlGaAs, GaP, etc.
VII. - Devices based on large-bandgap semiconductor materials: GaN, SiC, BN, C (diamond).
VIII. - Passive components (resistors, capacitors, inductors) for high temperatures.
IX. – Assembly and packaging for high temperatures: thin-film, thick-film, die-attach, wirebonding, soldering, packages, interfacing, examples of assemblies.
X. - Modeling & simulation.
XI. - Reliability & aging: how high temperature differs from room temperature, mechanical stress, failure rates, temperature cycling, testing examples, adaptive circuitry.
XII. - Radiation effects with examples.
XIII. - Design issues and ideas: choosing components, factors, temperature/temperature range, lifetime requirements, environment & additional stresses, mechanical, resources, custom vs commercial.
XIV. - Alternative technologies for high temperature electronics.
Commercial components for high temperatures: passives, semiconductor devices, circuits.
XV. - References & Bibliography

Course Objectives: Provide an overview of situations where the technologies of electronics and high temperatures are brought together. Provide an overview of the applications for high temperature electronics. Survey the relationships between fundamental phenomena, materials behavior, and device and system characteristics and performance at high temperatures. Overview the behavior of materials and components used in electronics at high temperatures: metals, ceramics, plastics, passive components, semiconductor materials and devices, and electronic circuits and assemblies. Provide practical information on materials, devices, circuits and techniques for those involved in developing high-temperature electronics.

Copies of the slides (approximately 275), course notes (approximately 150 pages), and more than 500 references/bibliographic items are provided.

Who Should Attend?: Engineers and technical persons in research or development of electronics for high-temperature applications. Familiarity with electronic devices and circuits is an advantage; however, materials and device fundamentals will be reviewed.

Dr. Randall Kirschman is an internationally recognized authority on extreme-temperature electronics. He has been consulting to industry, government and academe since 1980 in the areas of microelectronic materials and fabrication technology, and electronics for extreme temperatures. Before going into business for himself in 1982, he managed the processing laboratory at the R&D Center at a division of Eaton Corporation, where he was responsible for the fabrication of thin-film hybrids for microwave components. Prior to that, he was on the staff of the Jet Propulsion Laboratory, performing research on semiconductor materials and devices. During 1990-91 he was a Visiting Senior Research Fellow at the Institute of Cryogenics, University of Southampton, England. Between 1998-2005, he was a member of the Physics Department at Oxford University. He edited the 1999 IEEE Press/Wiley book High-Temperature Electronics. He completed his undergraduate studies at the University of California, and earned his Ph.D. in Physics and Electrical Engineering at the California Institute of Technology in 1972.


Tuesday, May 13

Registration: 7:00 am - 6:30 pm

Breakfast: 7:00 am - 7:45 am

Opening Remarks: 8:00 am - 8:15 am
Conference Chairs

Exhibit Hours: 11:30 am - 6:30 pm
(Afternoon Refreshment Break, Lunch & Reception will be held in the Exhibit Area)

Session TA1: Power I
Chair: Liang-Yu Chen, OAI/NASA Glenn Research Ctr.
8:15 am - 11:45 am

New Battery Possibilities for High-temperature Electronics
Alexander Potanin, High Power Battery Systems Company (HPBS)

Using Parallel Multipliers for 100kV Downhole Neutron Tube Power Supplies
Gary Hanington, American High Voltage

SiC Power Schottky Diode for Solar Cell Protection
Pierre Brosselard, University de Lyon, INSA de Lyon (Dominique Tournier, Laboratoire Ampere; Philippe Godignon, CNM-CSIC)

Session TA2: Sensors
Chair: Harold L. Snyder, Jr., Physical Solutions
8:15 am - 11:45 am

Demonstration of SiC Pressure Sensors at 750ºC.
Robert Okojie, NASA Glenn Research Center

A MEMS Gyroscope for High Temperature Environments
Jeff Watson, Analog Devices (Venkataraman Chandrasekaran)

Extreme Environment Hybrid Systems Utilizing CVD Nanodiamond Smart Sensors
John Fraley, Arkansas Power Electronics International, Inc. (Lauren Kegley, Stephen Minden, Jimmy Davidson, David Kerns)

Break: 9:45 am - 10:15 am

New Generations of Highly Integrated High Temperature DC-DC Converters
Pierre Delatte, CISSOID (Thomas Francois, David Baldwin, Jan Beranek, Zlatan Gradincic, Etienne Vanzieleghem)

A High Temperature (> 250°C) SiC Schottky Diode Bridge Rectifier for Extreme Environment Applications
Brandon Passmore, Arkansas Power Electronics International (Sergei Storkov, Dan Martin, Greg Falling, Robert Shaw, Ty McNutt, Kraig Olejniczak)

A 200°C Quad-Output Switched Mode Power Supply IC
Walt Merrill, BluBerry LLC (Daniel Goff, Steve Majerus)

High Temperature Microelectromechanical Systems Using Piezoelectric Aluminum Nitride
Benjamin Griffin, Sandia National Laboratories (Scott Habermehl, Peggy Clews)

High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors
Robert Okojie, NASA Glenn Research Center

A Low Power Precision Data Acquisition Solution for High Temperature Applications
Jeff Watson, Analog Devices (Maithil Pachchigar)

Lunch Break in the Exhibit Hall: 11:45 am - 1:15 pm
(Food Served 12:15 pm - 1:15 pm)

Premier Sponsor Lunch-Time Presentations: 12:30 pm - 1:00 pm

Session TP1: Wide Bandgap
Chair: Jeff Casady, SemiSouth
1:30 pm - 5:30 pm

High Temperature Capable SiC Schottky Diodes, based on Buried Grid Design
Tomas Hjort, Ascatron AB

Analog and Logic High Temperature Integrated Circuits based on SiC JFETs
Peter Alexandrov, United Silicon Carbide, Inc. (Xueqing Li, Matt O’Grady, John Hostetler)

Experimental Results of Testing High-Temperature High-Current Pulsed Operation of SiC MOSFETs and SiC Diodes
Steven Morris, Baker Hughes (Zinovy Krugliak, Ruichen Zhang)

500°C Silicon Carbide MOSFET-based Integrated Circuits
Cheng-Po Chen, General Electric Global Research (Reza Ghandi, Liang Yin, Xingguang Zhu)

Session TP2: Passives
Chair: Bruce Ohme, Honeywell
1:30 pm - 5:00 pm

High Temperature Tantalum-MnO2 Capacitors: >200ºC
Humberto Jasso, Kemet Electronics (Kristin Tempel, Henry Bishop)

Design Considerations for Reliable High Temperature Performance of Wet Electrolytic Tantalum Capacitors
Jeremy Ladd, Evans Capacitor Company

Stacked Ceramic Capacitors for High Temperatures (≥200°C)
John Bultitude, KEMET Electronics Corporation (Lonnie Jones, John McConnell, Abhijit Gurav)

Class-I and Class-II Ceramic Capacitors for High Temperature Applications
Abhijit Gurav, KEMET Electronics Corporation (Xilin Xu, Jim Magee, Reggie Phillips, Travis Ashburn)

Break in Exhibit Area: 3:30 pm - 4:00 pm

500kHz-5MHz Phase-Locked Loops in High-Temperature Silicon Carbide CMOS
Paul Shepherd, University of Arkansas (Ashfaqur Rahman, Shamim Ahmed, H. Alan Mantooth)

500°C operation of AlGaN/GaN and AlInN/GaN Integrated Circuits
M. Gaevski, Sensor Electronic Tech. (G.Simin, J.Deng, R.Gaska)

Topside Nanocrystalline Diamond Integration on AlGaN/GaN HEMTs for High Temperature Operation
Andrew Koehler, Naval Research Laboratory (Travis Anderson, Marko Tadjer, Karl Hobart, Tatyana Feygelson, Jennifer Hite, Bradford Pate, Francis Kub, Charles Eddy, Jr)

Ceramic-Polymer Film Capacitors for High Temperature Power Converters
Kirk Slenes, TPL Inc. (Lew Bragg, Dale Perry)

Integrated Passive Devices with Embedded Capacitors and Resistors with Outstanding Stability and Reliability for Harsh Environment Applications
Catherine Bunel, IPDiA (Laurent Lengignon)

Reception in Exhibit Area: 5:00 pm - 6:30 pm

Wednesday, May 14

Registration: 7:00 am - 5:30 pm

Breakfast: 7:00 am - 7:45 am

Exhibit Hours: 10:00 am - 4:00 pm
(Refreshment Break & Lunch will be held in the Exhibit Area.)

Complimentary Shuttle To Old Town
6:00 pm (first departure) - 10:30 pm (last return)


Session WA1: Si
Chair: Randy Normann, Perma Works LLC
8:00 am - 11:30 am

A 256 kb (32kx8) EEPROM for >200 C Applications
Dennis Adams, Northrop Grumman Corporation (Randall Lewis, Jason O’Brien, Bill Hand, Greg Marsh, Ian Manwaring, Donald Pierce, Cory Sherman, Sze Wong)

The Effects of Repeated Refresh Cycles on the Oxide Integrity of EEPROM Memories at High Temperature
Lynn Reed, Tekmos (Vema Reddy)

Characterization of Circuit Blocks for Configurable Analog-Front-End
Bruce Ohme, Honeywell Aerospace (Mark Larson; Bhal Tulpule, Embedded Systems LLC; Alireza Behbahani, Air Force Research Lab (AFRL))

High Temperature 0.35 Micron Silicon-on-Insulator CMOS Technology
Holger Kappert, Fraunhofer Institute for Microelectronic Circuits and Systems IMS (Stefan Dreiner, Katharina Grella, Miriam Klusmann, Norbert Kordas, Alexander Schmidt, Uwe Paschen, Rainer Kokozinski)

Session WA2: Packaging I: Die Attach
Chair: Patrick McCluskey, University of Maryland
8:00 am - 12:00 pm

Pressureless, Low Temperature Sintering of Micro-scale Silver Paste for Die Attach for 300°C Applications
Fang Yu, Auburn University (R. Wayne Johnson, Tennessee Tech University; Mike Hamilton, Auburn University)

Development of Low Temperature Sintered Nano Silver Pastes Using MO Technology and Resin Reinforcing Technology
Ken Araujo, NAMICS Corporation (Koji Sasaki, Noritsuka Mizumura)

Uniqueness and Challenges of Sintered Silver as a Bonded Interface Material
Andrew Wereszczak, Oak Ridge National Laboratory (Zhenxian Liang, Laura Marlino)

Thermo-mechanical Simulation of Sintered Ag Die Attach
M.F. Sousa, Fraunhofer IZM (M.v. Dijk, H. Walter, C. Weber, H. Oppermann, O. Wittler, K.D. Lang)

Break in Exhibit Area: 10:00 am - 11:00 am

A 200°C Motor Control ASIC
Steve Majerus, Bluberry, LLC (Dan Goff, Walter Merrill)

Development of a Ag/Glass Die Attach Paste for High Power and High Use Temperature Applications
Maciej Patelka, NAMICS North American R&D Center - Diemat, Inc. (Noriyuki Sakai, Cathy Trumble)

Stress Intensity of Delamination in a Sintered-Silver Interconnection
D. J. DeVoto, National Renewable Energy National Laboratory (Andrew Wereszczak, Paul Paret)

Lunch Break in Exhibit Area: 12:00 pm - 1:30 pm

Student Paper Competition Award in Exhibit Hall: 1:15 pm - 1:30 pm

Student Paper Competition Award
Sponsored by:
IMAPS Microelectronics Foundation

Session WP1: Power II
Chair: Susan Heidger, Air Force Research Laboratory

1:30 pm - 5:30 pm

GaN Power Module with High Temperature Gate Driver and Insulated Power Supply
Remi Perrin, Ampere Laboratory UCBL INSA (Dominique Bergogne, Gonzalo Picun, X-Rel Semi; Regis Meuret, Labinal Power Systems; Christian Martin, Pascal Bevilacqua, Ampere Lab.)

Highly Integrated and Isolated Universal Half-Bridge Power Gate Driver and Associated Flyback Power Supply for High Temperature and High Reliability Applications
David Gras, X-REL Semiconductor (Christophe Pautrel, Amir Fanaei, Gregory Thepaut, Maxime Chabert, Fabien Laplace, Gonzalo Picun)

Integrating the Control Loop and Magnetics for High Temperature Switch Mode Power Supplies
Harold L. Snyder, Jr., Physical Solutions

Session WP2: Packaging II: Materials
Chair: Adam Schubring, Kyocera America
1:30 pm - 5:30 pm

High Temperature Laminate Characterization
David Shaddock, General Electric Global Research (Liang Yin)

Extreme Thermal Resistance of All-Polyimide Bondlines with TPI Adhesive
Jim Fraivillig, Fraivillig Technologies

Temperature Dependence of High Dielectric Strength Potting Materials for Medium Voltage Power Modules
Chad O’Neal, Arkansas Power Electronics International Inc. (Brandon Passmore, Matthew Feurtado, Jennifer Stabach, Ty McNutt)

Break: 3:00 pm - 4:00 pm

Integrated Protection Circuits for an NMOS Silicon Carbide Gate Driver IC
Paul Shepherd, University of Arkansas (Dillon Kaiser, Michael Glover, Sonia Perez, A. Matt Francis, H. Alan Mantooth)

8-15 kV High Temperature SiC PiN and Schottky Rectifiers
Ranbir Singh, GeneSiC Semiconductor Inc. (Siddarth Sundaresan)

Performance and Reliability Characterization of 1200 V Silicon Carbide Power JFETs at High Temperatures
Jack Flicker, Sandia National Laboratories (David Hughart, Matthew Marinella, Stanley Atcitty, Robert Kaplar)

Enhancing Performance and Reliability of High Temperature Electronics Through Thermally Stable Parylene HT
Rakesh Kumar, Specialty Coating Systems, Inc.

Modeling of Thermomechanical Behavior of Wire Bonded Electronic Devices Under Combined Thermal and Vibration Loads
Richard Man, Loughborough University (Changqing Liu, Maria Mirgkizoudi)

Dielectric Performance of a High Purity HTCC Alumina at High Temperatures - A Comparison Study with Other Polycrystalline Alumina
Liang-Yu Chen, Ohio Aerospace Institute/NASA Glenn Research Center

Complimentary Shuttle To Old Town
6:00 pm (first departure) - 10:30 pm (last return)
Attendees can spend the evening in old visiting shops, restaurants, etc.
Attendees ON OWN for all meals/purchases in Old Town

Thursday, May 15

Registration: 7:00 am - 11:30 am

Breakfast: 7:00 am - 7:45 am


Session THA1: Applications
Chair: Robert Estes, Baker Hughes
8:00 am - 12:00 pm

A System On Chip (SOC) ASIC Chipset for Aerospace and Energy Exploration Applications
Bhal Tulpule, Embedded Systems LLC (Bruce Ohme, Mark Larson, Honeywell; Al Steines, John Gerety, Embedded Systems LLC)

Design and Assembly of High Temperature Distributed Aero-engine Control System Demonstrator
Steve Riches, GE Aviation Systems (Lucian Stoica, Geoff Rickard, Colin Warn, Colin Johnston)

Platform for Testing Sensors in HT Geothermal Wells
Randy Normann, Perma Works LLC

Session THA2: Packaging III: Solders & Assemblies
Chair: Colin Johnston, Oxford University
8:00 am - 12:00 pm

Off the Shelf Chip and Die Extraction for Long Term Reliability
Terence Q. Collier, CVInc

The Melting-point Increase of Sn-Bi Solder Joint by Cu Particles Addition
Omid Mokhtari, Joining and Welding Research Institute, Osaka University (Hiroshi Nishikawa)

Characterization of BiAgX Solder Paste on Thick Film for 200°C Applications
Zhenzhen Shen, Auburn University (R. Wayne Johnson, Tennessee Tech University; Michael Hamilton, Auburn University)

Break: 9:30 am - 10:00 am

230°C Accelerometer with Digitized Output for Directional Drilling
Douglas MacGugan, Honeywell Aero. (Eric Abbott, Chris Milne)

HPHT Coiled Tubing Casing Collar Locator Enhancement Via Digital Signal Processing Techniques for Accurate Depth Control in Wire-line Well Interventions
Rito Mijarez, Instituto de Investigaciones Electricas (David Pascacio, Ricardo Guevara, Carlos Tello, Olimpia Pacheco, Joaquin Rodri­guez)

Galvanic Isolation of Logic Signals at Extreme Temperatures
Bruce Ferguson, Microsemi, Inc.

Has Microelectronic MCM Technology Matured and is it Capable of Servicing the Widespread Needs of Down Well 225°C Operating Applications in the Oil & Gas Industry?
Bob Hunt, API Technologies Corp. (Mark Read, Andy Tooke)

Processing, Reliability and Corrosion Resistance of Lead-Free BiAgX(TM) Solder Paste
Hongwen Zhang, Indium Corp. (Runsheng Mao, Ning-Cheng Lee)

Strength and Reliability of High Temperature Transient Liquid Phase Sintered Joints
F. Patrick McCluskey, University of Maryland (Hannes Greve, Seyed Ali Moeini)

Effect of Sn component surface finish on 92.5Pb-5Sn-2.5Ag
Harry Schoeller, Universal Instruments AREA Consortium, Binghamton University (Eric Cotts, Martin Anselm, Imran Khan)

Design and Manufacturing of a Double-side Cooled, SiC based, High Temperature Inverter Leg
Cyril Buttay, Laboratoire Ampere (Raphael Riva, Marie-Laure Locatelli, Vincent Bley, Bruno Allard)


Closing Remarks From Chairs: 12:00 pm - 12:15 pm





Premier Sponsors:

HiTEC Premier Sponsor - Presidio Components

HiTEN Premier Sponsor - CISSOID

HiTEN Premier Sponsor - M.S. KENNEDY Corp.

HiTEC Premier Sponsor - Trendsetter Electronics

Corporate Sponsors:

HiTEC Corporate Sponsor - XREL Semiconductor

HiTEC Corporate Sponsor - Analog Devices

HiTEC Corporate Sponsor - Ascatron

HiTEC Corporate Sponsor - Texas Instruments

HiTEC Corporate Sponsor - International Rectifier

HiTEC Corporate Sponsor - Tekmos

HiTEC Corporate Sponsor - JOULE

HiTEC Corporate Sponsor -  Eltek Semiconductors


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611 2nd Street, N.E., Washington, D.C. 20002
Phone: 202-548-4001

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