International Conference on
High Temperature Electronics
(HiTEC 2016)

May 10-12, 2016
Albuquerque Marriott Pyramid North
5151 San Francisco Rd NE
Albuquerque, New Mexico 87109 USA

Conference Events and Technical Program
May 10-12, 2016
Tabletop Exhibition
May 10-11, 2016

General Co-Chairs:
Wayne Johnson, Tennessee Tech University -
Colin Johnston, Oxford University -

Technical Co-Chairs:
Susan L. Heidger, Air Force Research Laboratory -
F. Patrick McCluskey, University of Maryland -
Randy Normann, Perma Works, LLC -

Premier Sponsors:
HiTEC Premier Sponsor - Presidio Components
HiTEC Premier Sponsor - X-Rel
HiTEC Premier Sponsor - NGK NTK
HiTEC Premier Sponsor - Vorago Technologies
HiTEC Premier Sponsor - Trendsetter Electronics


Corporate Sponsors:

HiTEC Corporate Sponsor - Criteria Labs
HiTEC Corporate Sponsor - Joule HiTEC Corporate Sponsor - RS Solutions HiTEC Corporate Sponsor - KEMET
HiTEC Corporate Sponsor - RelChip

HiTEC Corporate Sponsor - CISSOID

HiTEC Corporate Sponsor - Analog Devices HiTEC Corporate Sponsor - Tekmos


Tabletop Exhibit Information | 2016 Exhibiting Companies

HiTEC 2016 continues the tradition of providing the leading biennial conference dedicated to the advancement and dissemination of knowledge of the high temperature electronics industry. Under the organizational sponsorship of the International Microelectronics Assembly and Packaging Society, HiTEC 2016 will be the forum for presenting leading high temperature electronics research results and application requirements. It will also be an opportunity to network with colleagues from around the world working to advance high temperature electronics.

  MONDAY, MAY 9 | Pre-Conference Short Course (PDC)

10:00am-6:00pm Registration Open


Pre-Conference Professional Development Course on:

High Temperature Electronics
PDC Instructor: Randall Kirschman, Consultant

Includes Working Lunch (1-2pm) and coffee break (4-4:30pm)
$400 Additional registration fee from HiTEC Attendee Registration

Course Description: High-Temperature Electronics (HTE) is a valuable option for substantially improving overall system performance. Operating temperature may be thought of as an additional design parameter when justified by system performance requirements. The course is updated and expanded for 2016.

Applications of HTE include many areas: petroleum and geothermal wells, ground vehicles, aircraft, Solar System exploration, and electric power. Relocating electronic subsystems to high temperature can improve overall system efficiency, decrease size and weight, simplify maintenance and improve reliability. At the same time there are many technical challenges, related to materials and their interactions, component behavior, circuit design and interfacing.

The focus of this course is semiconductor electronics at high temperatures: device behavior, applications, advantages and drawbacks, technical issues and present situation. Basic materials characteristics related to electronics at high temperatures, and passive electronic component behavior are included, as well as assembly, packaging and interconnection. The temperature range covered in this course extends from +125C upward, as high as 1000C. Depending on the temperature range, HTE semiconductor devices may be based on Si, SiGe, GaAs, SiC, GaN, C (diamond) and other materials.

Although future developments in electronics are difficult to predict, it is likely that high-temperature electronics will find increased use for enhanced performance in extreme environments.


I. - Introduction and definitions, course description & objectives, temperature ranges, history and background.
II. - Applications: oil and geothermal well measurements, space exploration and power, aircraft,  automotive. Reasons for high-temperature operation of electronics; benefits and drawbacks.
III. - Materials behavior - non-semiconductors: thermal conductivity, thermal expansion, heat capacity, thermal diffusivity, electrical conduction, glass transition temperature, strength, temperature capabilities, dielectric properties, magnetic properties.
IV. - General semiconductor materials behavior: carrier generation, mobility, electrical conductivity, behavior and capabilities of Ge, Si, SiGe, GaAs, GaN, SiC, BN, C (diamond), etc. - semiconductor device temperature capabilities/limits.
V. - Silicon device behavior: diodes, bipolar transistors, FETs (JFETs, MOSFETs, etc.), power devices (MOSFETs, IGBTs, thyristors, etc.), integrated circuits (bipolar, CMOS, SOI); SiGe devices.
VI. - Devices based on medium-bandgap semiconductor materials: GaAs, AlGaAs, GaP, etc.
VII. - Devices based on large-bandgap semiconductor materials: GaN, SiC, BN, C (diamond).
VIII. - Passive components (resistors, capacitors, inductors) for high temperatures.
IX. – Assembly and packaging for high temperatures: thin-film, thick-film, die-attach, wirebonding, soldering, packages, interfacing, examples of assemblies.
X. - Modeling & simulation.
XI. - Reliability & aging: how high temperature differs from room temperature, mechanical stress, failure rates, temperature cycling, testing examples, adaptive circuitry.
XII. - Radiation effects with examples.
XIII. - Design issues and ideas: choosing components, factors, temperature/temperature range, lifetime requirements, environment & additional stresses, mechanical, resources, custom vs commercial.
XIV. - Alternative technologies for high temperature electronics.
Commercial components for high temperatures: passives, semiconductor devices, circuits.
XV. - References & Bibliography

Course Objectives: Provide an overview of situations where the technologies of electronics and high temperatures are brought together. Provide an overview of the applications for high temperature electronics. Survey the relationships between fundamental phenomena, materials behavior, and device and system characteristics and performance at high temperatures. Overview the behavior of materials and components used in electronics at high temperatures: metals, ceramics, plastics, passive components, semiconductor materials and devices, and electronic circuits and assemblies. Provide practical information on materials, devices, circuits and techniques for those involved in developing high-temperature electronics.

Copies of the slides (approximately 275), course notes (approximately 150 pages), and more than 500 references/bibliographic items are provided.

Who Should Attend?: Engineers and technical persons in research or development of electronics for high-temperature applications. Familiarity with electronic devices and circuits is an advantage; however, materials and device fundamentals will be reviewed.

Dr. Randall Kirschman is an internationally recognized authority on extreme-temperature electronics. He has been consulting to industry, government and academe since 1980 in the areas of microelectronic materials and fabrication technology, and electronics for extreme temperatures. Before going into business for himself in 1982, he managed the processing laboratory at the R&D Center at a division of Eaton Corporation, where he was responsible for the fabrication of thin-film hybrids for microwave components. Prior to that, he was on the staff of the Jet Propulsion Laboratory, performing research on semiconductor materials and devices. During 1990-91 he was a Visiting Senior Research Fellow at the Institute of Cryogenics, University of Southampton, England. Between 1998-2005, he was a member of the Physics Department at Oxford University. He edited the 1999 IEEE Press/Wiley book High-Temperature Electronics. He completed his undergraduate studies at the University of California, and earned his Ph.D. in Physics and Electrical Engineering at the California Institute of Technology in 1972.




7:30am-6:30pm Registration Open

10:15am-6:30pm Exhibits Open

7:30am-8:25am Breakfast

8:30am-8:45am Opening Remarks:
General Chair: Wayne Johnson, Tennessee Tech University




HOT300 - A Multidisciplinary Technology Approach Targeting Microelectronical Systems at 300°C Operating Temperature
Abstract: Several applications in the field of industrial sensors or power electronics are creating a demand for high operating temperature of 300C or even higher. Due to the increased temperature range new potential defect risks and material interactions have to be considered. As a consequence, innovation in semiconductor, devices and packaging technologies has to be accompanied by dedicated research of the reliability properties. Therefore various investigations on realizing high temperature capable electronic systems have shown that a multidisciplinary approach is necessary to achieve high reliable solutions. In the course of the multi-institute Fraunhofer internal research program HOT-300 several aspects of microelectronic systems running up to 300C have been investigated like SOI-CMOS technology and circuits, silicon capacitor devices, a capacitive micromachined ultrasonic transducer (CMUT), ceramic substrates and different packaging and assembly techniques. A ceramic molded package has been developed and for the molded package die attach on different leadframe alloys were investigated using silver sintering and transient liquid phase bonding (TLPB). Copper and gold wire bonding were studied used to connect the chips with the package terminals. Investigations in flip chip technology were performed using Au/Sn and Cu/Sn solder bumps for transient liquid phase bonding. High operating temperatures result in new temperature driven mechanisms of degradation and material interactions. It is quite possible that the thermomechanical reliability is a limiting factor for the technology to be developed. Therefore investigations on material diagnostics, reliability testing and modeling have been included in the project, complementing the technology developments. In this paper we will provide an overview of the overall project and we will present some exemplary results with respect to high temperature SOI-CMOS, silicon capacitors, die assembly, ceramic as substrate and package, MEMS sensor development and reliability aspects.

Plenary - Kappert Holger Kappert, Fraunhofer IMS
Holger Kappert received his Diplomingenieur degree in electrical engineering from the University of Bochum (RUB) in 1993. Immediately afterwards he joined the Fraunhofer Institute for Microelectronic Circuits and Systems IMS in Duisburg. He has more than 20 years of experience in the field of mixed-signal CMOS circuitry and embedded microcontroller system design, participating in and managing a large number of publicly funded and industrial R&D activities covering a wide range of application areas. Since 2009 he is heading the business unit "High Temperature Electronics" at Fraunhofer IMS.

High Reliability Electronics For Demanding Aircraft Applications - An Overview
Abstract: The primary form of generated power on any typical aircraft (Tactical, Airlift, Commercial) requires conversion in multiple different forms (voltage levels, aircraft compliant frequency) and at various power levels to meet the total needs of the vehicle. DC:AC Power Conversion (Inverters), AC-DC Generator (conditioning) electronics, AC-AC frequency conditioning and DC:DC Power Conversion are all forms of conversion within the power system (primary, secondary tiers) typical of any aircraft. Additionally, within the power distribution network often solid state power switches in later generation aircraft and fighters are used to control and manage power (control power ramp-up for example) to loads and isolate electrical faults. The conditioning, conversion and control of this power with high reliability devices can often occur in more extreme environments (high temperatures, high vibration and confined spaces) and can present challenging issues for aerospace and specifically aircraft. Weight objectives can further add to the challenges.

This presentation will discuss some of the aforementioned challenges including the susceptibility to both electrically and mechanically induced failure modes in power devices encountered in aircraft. The paper will also discuss the notion that “while Wide Band Gap (WBG) technology may be the right answer in some/many applications, it may not be the ‘end-all’ answer in achieving high reliability given a specific combination of application and operating conditions”. Reliability issues of power devices in aircraft will be presented as involving: a) packaging aspects and b) ‘off-nominal’ operating conditions that drive to the corner of the design. Further, the ability to receive adequate forms of cooling from the aircraft (if not otherwise constrained and if cooling margins permit) to power electronics will also be discussed as an obvious and significant driver in maintaining high reliability and integrity in more demanding (and higher power) applications. Aspects of trade assessments that have occurred with optimizing power conditioning electronics in high temperature conditions will also be discussed.

The talk will be concluded with a discussion on the potential of WBG technology to meet a variety of application needs mentioned for aircraft including: a) Power (distribution) switching, b) Power (load management) control, c) Power Conversion and d) Battery Chargers. Questions and unknowns regarding the ability of WBG to meet key parameter needs in each of the potential applications will be posed. Finally, a conclusion will be provided to wrap-up the topic with various follow-on items highlighted for further activity.

Plenary - Brewer Roger Brewer, Electrical Engineer, Sr. Staff - Lockheed Martin Aeronautics
With close to 27 years of experience at Lockheed Martin, Roger started his career in Electrical Engineering at the Missiles and Space Systems Business Unit in Sunnyvale California supporting power component reliability assessments and investigations for the TRIDENT II Missile program. Since 1993, he has been with the Lockheed Martin Aeronautics Business Unit at both the Marietta Georgia and Ft. Worth Texas sites supporting aircraft power systems and related technology development for a variety of platforms including the F-22, C-130, C-5, P3/S3, Advanced Development Programs, Corporate Engineering support and the F-35. He has provided several presentations and given talks, both at internal Lockheed Martin conferences and business engagements and at industry energy and power conferences, outlining research being performed to improve aircraft power system performance in both existing and future platforms. He is a member of IEEE as well as a member of the Lockheed Martin Rising Technical Talent program. He holds a Bachelor of Science Degree in Electrical Engineering from the University of Illinois and a Master of Science Degree in Electrical Engineering from North Carolina State University.

10:15am-11:00am Coffee Break in the Exhibits


New Frontiers in Geothermal Power Generation
Abstract: Geothermal power is continuing to grow worldwide. The current oil low prices benefit the geothermal industry by reducing the competitive cost of hiring drilling equipment. A new geothermal power plant is expected to run 24-7 for 30 to 50 years. For example, Geysers in California is one of the world’s largest geothermal power producing fields. The first geothermal power plant at The Geysers was started in September 1960. The Geyser field is still producing over 600MW of energy 56 years later with an average power plant availability of 96%. The Geysers is a natural reservoir of 359°F (~ 181.7°C) average steam temperature found in a high permeability rock formation. Today, research in the US is looking to increase the availability of geothermal power across the US by engineering geothermal reservoirs where natural resources are marginal. A marginal reservoir has either lower temperatures or lack of permeability of the reservoir rock or a combination of the two. Running a power plant from a marginal geothermal system will require well monitoring and well control systems deep inside the well. To enable cost effect monitoring and control systems requires the continued development of high temperature electronics and fiber optics with useful operating life times of 30 to 50 years.

Plenary - Normann Randy Normann, CTO - Perma Works LLC
Randy Normann received his under graduate degree from Oregon Institute of Technology, OIT. The OIT campus is heated by natural geothermal. He received his MS EECE from University of New Mexico. Randy founded Perma Works LLC to manufacture the world’s only electronic geothermal reservoir testing system. Before Perma Works, Randy worked in Sandia National Laboratory’s Geothermal Research Department as the lead investigator for High-Temperature Electronics and Fiber Optics development. Randy has been the General Co-Chair for the High-Temperature Electronics Conference for over 14 years and a long term member of the European High-Temperature Network, HITEN. He currently serves as the Working Group Convener for High-Temperature Tools under the International Partnership for Geothermal Technology lead by the US Department of Energy’s Geothermal Technologies Program in Washington, DC. In the area of high-temperature battery research, he received an R & D 100 award in 2006 for the first ever 250ºC battery. This battery is also environmentally safe. In 2015, Randy was awarded a US patent for use of high-temperature power electronics and high temperature batteries for a battery energy storage system attached to a geothermal power plant.

11:45am-1:00pm Lunch in the Exhibits


Session Chair: Harold L. Snyder, Jr., Physical Solutions

Session Chair: Liang-Yu Chen, Ohio Aerospace Institute/NASA Glenn Research Center

1:00pm-1:30pm Increased High-Temperature IC Packaging Reliability Using Die Extraction and Additive Manufacturing Assembly
Erick Spory, Global Circuit Innovations, Inc.
Co-fired Platinum High Temperature Sensor Element
Tsutomu Sugawara, KYOCERA Corporation (Hiroshi Matsumoto, Hiroki Ito, Shingo Sato, Masanari Kokubu)
1:30pm-2:00pm A Fully Functional and Reliable 200C EEPROM
Richard Wheelus, ON Semiconductor (Stanislav Seleznev, Tomas Drajsajtl, Radomir Plachejda, Dean Allum)
High Temperature Potting Materials for Wire Bond Encapsulation
David Shaddock, General Electric Global Research (Liang Yin)
2:00pm-2:30pm A 225C Geothermal Logging Tool
Marshall Soares, RelChip, Inc. (Randy Normann, PermaWorks, LLC; Bruce Ohme, Honeywell International)
Electrical Performance of a High Temperature 32-I/O HTCC Alumina Package
Liang-Yu Chen, Ohio Aerospace Institute/NASA Glenn Research Center (Philip Neudeck, David Spry, Glenn Beheim, Gary Hunter, NASA Glenn Research Center)
2:30pm-3:00pm High Precision Analog Multiplexers Enable Multi-Channel Data Acquisition in High Temperature Environments
Jeff Watson, Analog Devices (Stephen Nugent, Stephen Kavanagh)
Developments for Copper-Graphite Composite Thermal Cores for PCBs for High-Reliability and High-Temperature RF Systems
David Saums, DS&A LLC (Robert Hay, Parker Hannifin Corporation)

3:00pm-3:45pm Coffee Break in the Exhibits

3:45pm-4:15pm High Temperature Smart Node for Distributed Propulsion Controls
Bhal Tulpule, Embedded Systems LLC (Al Behbahani, AFRL)
Metallic TIM Testing and Selection for Harsh Environment Applicaations for GaN RF Devices
David Saums, DS&A LLC (T. Jensen, Indium Corporation)
4:15pm-4:45pm High Temperature Capable ARM Cortex M0 Microcontroller
Ross Bannatyne, VORAGO Technologies (Kevin Klein, Clay Merritt, David Gifford, Garry Nash)
Encapsulation Method for Small Wireless Measurement Systems in High Temperature Environments
Jonny Johansson, Luleå University of Technology (Johan Borg, Julia Fischer)
4:45pm-5:15pm Towards Integrated Sensors for Environments with Temperatures up to 600°C
Ayden Maralani, University of California, San Diego (Levent Beker, Albert Pisano)
Decapsulation of Copper Wire Bond Devices Using Three-Step Process
Subramani Manoharan, University of Maryland

5:15pm-6:30pm Reception in the Exhibits




7:30am-5:30pm Registration Open

10:15am-4:15pm Exhibits Open

7:30am-8:25am Breakfast

8:30am-8:45am Opening Remarks:
General Chair: Colin Johnston, Oxford University
Technical Chair: F. Patrick McCluskey, University of Maryland


Session Chair: Randy Normann, Perma Works, LLC

Session Chairs: Fang Yu, Auburn University; Mike Glover, University of Arkansas

8:45am-9:15am Improving Efficiency in Downhole Power Converters Using GaN Technology
Gary Hanington, American High Voltage
Development of an Ag/glass Die Attach Paste for High Power and High Use Temperature Applications
Ken Araujo, NAMICS Technologies, Inc. (Maciej Patelka, Noriyuki Sakai, Cathy Trumble)
9:15am-9:45am A CMOS SiC Linear Voltage Regulator for High-Temperature Applications
Robert Murphree, University of Arkansas (Ashfaqur Rahman, Matthew Barlow, Shamim Ahmed, Anthony Francis, Alan Mantooth)
Development of BiAgX® HT Solder Paste for 200°C Application
Hongwen Zhang, Indium Corporation (Jonathan Minter, Ning-Cheng Lee)
9:45am-10:15am High Temperature GaN Gate Driver in SOI CMOS Technology
Holger Kappert, Fraunhofer IMS (Sebastian Braun, Norbert Kordas, Stefan Dreiner, Rainer Kokozinski)
Silver Sintering Paste Rendering Low Porosity Joint for High Power Die Attach Application
Sihai Chen, Indium Corporation (Chris LaBarbera, Ning-Cheng Lee)

10:15am-11:00am Coffee Break in the Exhibits

11:00am-11:30am High-Temperature Self-Supplied Isolated Driver Module for GaN Power Transistors
Vincent Dessard, VDD-CONSULT (Xavier Baie, VDD-Consult; René Escoffier, CEA; Fabien Laplace, Gonzalo Picun, X-REL Semiconductor)
Effect of Isothermal Aging at 250° on Shear Strength of Joints Using Au Nanoporous Bonding for Die Attach
Hiroshi Nishikawa, Osaka University (Kaori Matsunaga, Min-Su Kim, Mikiko Saito, Jun Mizuno)
11:30am-12:00pm The Design, Simulation, and Performance Characteristics of High Temperature Brushed and Brushless DC Motors, and Their Electronic Controllers
Harold L. Snyder, Jr., Physical Solutions
Reliability of Transient Liquid Phase Sintered (TLPS) Joints Under Temperature and Power Cycling Loads
Patrick McCluskey, University of Maryland (S. Ali Moeini, Hannes Greve)

12:00pm-2:00pm Lunch in the Exhibits


Session Chair: F. Patrick McCluskey, University of Maryland

Session Chair: Colin Johnston, Oxford University

2:00pm-2:30pm A High Performance Power Module to Characterize and Test In Situ >10kV SiC Devices at >200°C Ambient
Xin Zhao, North Carolina State University (Haotao Ke, Yifan Jiang, Adam Morgan, Yang Xu, Douglas Hopkins)
Internal Structure Refinement of Porous Sintered Silver via Electromigration -- CANCELLED BY SPEAKER
Ali Mansourain, King's College London (Seyed Amir Paknejad, Wen Qiannan, Samjid Mannan)
2:30pm-3:00pm A Study of Flip-chip Bonded SiC Power Devices on a Low Temperature Co-fired Ceramic (LTCC) Substrate for Next Generation Power Modules
Sayan Seal, University of Arkansas (Michael Glover, Alan Mantooth)
Development of a High Temperature Interconnect Solution as an Alternative to High Pb or Au Content Solders
Martin Wickham, National Physical Laboratory
3:00pm-3:30pm Degradation Analysis of TO-247 Package SiC-MOSFETs Subjected to High Temperature Storage and Heavy Thermal Cycle Test
Sawa Araki, NISSAN ARC, LTD. (Tatsuhiro Suzuki, Mari Yamashita, Satoshi Tanimoto, Toshiaki Ono, Hisashi Yakumaru, Hiroki Sawada)
Method to Determine Maximum Allowable Sinterable Silver Interconnect Size
Andrew Wereszczak, Oak Ridge National Laboratory (M. C. Modugno, S. B. Waters, Oak Ridge National Laboratory; D. J. DeVoto, P. P. Paret, National Renewable Energy Laboratory)

3:30pm-4:15pm Coffee Break in the Exhibits

4:15pm-4:45pm Design and Testing of a High Temperature Inverter
Stephen Savulak, United Technologies Research Center (Shashank Krishnamurthy)
Towards High Temperature Electronic Modules in Which All Components would be Attached Using Silver Sintering
Thomas Geoffroy, Mines ParisTech and Safran Electronics (Jean-Christophe Riou, Yves Bienvenu, Corinne Pons, Sylvain Meille, Eric Bailly)
4:45pm-5:15pm Down-hole Switching-mode Power Supply Using a Remote CA Start Up Pulse
Rito Mijarez, Instituto de Investigaciones Eléctricas (Angel Gomez, David Pascacio, Ricardo Guevara)
Component Attachment with Pressureless Ag Sintering for High Temperature Applications
Fang Yu, Auburn University (Wayne Johnson, Michael Hamilton)
5:15pm-5:45pm Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments
Stanley Ikpe, NASA (Jean-Marie Lauenstein, Gregory Carr, Don Hunter, Lawrence Ludwig, William Wood, Linda Del Castillo)
Toward Interpreting Failure in Sintered-Silver Interconnection Systems
Max Modugno, Oak Ridge National Laboratory (Andrew Wereszczak, Shirley Waters)


Complimentary Shuttle To Old Town
6:00 pm (first departure) - 10:00 pm (last return)

Attendees can spend the evening in old visiting shops, restaurants, etc.
Attendees ON OWN for all meals/purchases in Old Towns




7:30am-12:00pm Registration Open

7:30am-8:25am Breakfast

8:30am-8:45am Opening Remarks:
General Chair: Wayne Johnson, Tennessee Tech University
Technical Chair: Randy Normann, Perma Works, LLC


(SiC & GaN)
Session Chairs: Mike Hamilton, Auburn University; Bruce Ohme, Honeywell

Session Chair: David Shaddock, General Electric Global Research

8:45am-9:15am High Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application
A. Matthew Francis, Ozark Integrated Circuits, Inc. (Jim Holmes, Nick Chiolino, Matthew Barlow, Affan Abbasi, Alan Mantooth)
Ceramic-Polymer Film Capacitors for High Temperature Power Converters
Kirk Slenes, TPL Inc. (Lew Bragg, Dale Perry)
9:15am-9:45am Processing and Characterization of Thousand-Hour 500°C Durable 4H-SiC JFET Integrated Circuits
David Spry, NASA (Philip Neudeck, Liangyu Chen, Dorothy Lukco, Carl Chang, Glenn Beheim, Michael Krasowski, Norman Prokop)
Silicon Capacitors and IPDs with Extremely High Stability and Reliability Ideal for High Temperature Aerospace Applications
Laurent Lengignon, IPDiA (Sebastien Leruez)
9:45am-10:15am Low Power Silicon Carbide RS-485 Transceiver
M. R. Benavides, University of Arkansas (A. N. Castillo, A. Rahman, A. M. Francis, K. Woodmansee, M. Barlow, D. Abreu, C. Rowlett, A. Mantooth)
C0G and X7R Ceramic Capacitors for High Temperature Applications
Abhijit Gurav, KEMET Electronics Corporation (Jim Magee, Reggie Phillips, Scott Carson)

10:15am-10:30am Coffee Break in the Foyer

10:30am-11:00am First-Order SPICE Modeling of Extreme-Temperature 4H-SiC JFET Integrated Circuits
Philip Neudeck, NASA Glenn Research Center (David Spry, Liangyu Chen)
Capacitor Technologies for High Temperature and Harsh Environment Applications
Chris Reynolds, AVX (Jan Petržílek)
11:00am-11:30am A High Temperature GaN-HEMT Passive Mixer for Downhole Communications
Jebreel Salem, Virginia Tech (Dong Ha)
High Temperature Surface Mount MLCC Technology Update
David Dupre, AVX Corporation
11:30am-12:00pm   Design of High Temperature Combline Band-pass Filters for Downhole Communications
Mohammed Ehteshamuddin, Virginia Tech (Jebreel Salem, Dong Ha)

12:00pm Closing Remarks


Registration Information:(Early Registration Deadline: April 13, 2016)

Member, Non-member, Speaker/Chair, Student and Chapter Officer registration fees include: access to all technical sessions, meals, receptions, refreshment breaks, an one (1) DOWNLOAD of the proceedings papers. Also includes a one-year IMAPS individual membership or membership renewal at no additional charge which does not apply to corporate or affiliate memberships.

All prices below are subject to change.

Early Fee
Through 4/13/16
Advance/Onsite Fee
After 4/13/16
IMAPS Member
Chapter Officer
High Temp Short Course (PDC / Pre-conference on Monday)
Tabletop Exhibit (Member) - SOLD OUT
Tabletop Exhibit (Non-Member) - SOLD OUT
Premier Sponsorship (Includes Tabletop) - SOLD OUT
Corporate Sponsorship (Includes Tabletop) - SOLD OUT


Speaker Dates/Information:

  • Abstract Deadline Extended to: February 26, 2016
  • Speaker notification: March 4, 2016
  • Final Manuscripts for Proceedings due: April 13, 2016
  • Early Registration/Hotel reservation cut-off: April 13, 2016
  • Speaker BIO Due: May 1, 2016
  • Presentation Slides Must Be Ready BEFORE: May 10, 2016
  • Powerpoint/Presentation file used during session: Speaker's responsibility to bring to session on USB and/or CD (recommended to have back-up on personal laptop or email to prior to event)


Hotel Information -- Hotel Deadline: April 13, 2016
You must book your hotel directly with the host hotel:

Albquerque Marriott Pyramid North
5151 San Francisco Rd NE
Albuquerque, New Mexico 87109 USA

  • Amkor
  • ASE
  • Canon
  • Corning
  • EMD Performance Materials
  • Honeywell
  • Indium
  • Kester
  • Kyocera America
  • Master Bond
  • Micro Systems Technologies
  • MRSI
  • Palomar
  • Promex
  • Qualcomm
  • Quik-Pak
  • Raytheon
  • Rochester Electronics
  • Specialty Coating Systems
  • Spectrum Semiconductor Materials
  • Technic